| Produsen Bagian Nomor. : | HS1DL RQG | Status RoHs : | |
|---|---|---|---|
| Pabrikan / Merek : | TSC (Taiwan Semiconductor) | Kondisi stok : | - |
| Deskripsi : | DIODE GEN PURP 200V 1A SUB SMA | Kirim Dari : | Hongkong |
| Lembar data : | HS1DL RQG.pdf | Cara pengiriman : | DHL/Fedex/TNT/UPS/EMS |
| Bagian No. | HS1DL RQG |
|---|---|
| Pabrikan | TSC (Taiwan Semiconductor) |
| Deskripsi | DIODE GEN PURP 200V 1A SUB SMA |
| Memimpin Status Bebas / Status RoHS | |
| Jumlah yang tersedia | Persediaan |
| Lembar data | HS1DL RQG.pdf |
| Tegangan - Forward (Vf) (Max) @ Jika | 950 mV @ 1 A |
| Tegangan - DC terbalik (Vr) (Max) | 200 V |
| Teknologi | Standard |
| Paket Perangkat pemasok | Sub SMA |
| Kecepatan | Fast Recovery =< 500ns, > 200mA (Io) |
| Seri | - |
| Sebaliknya Pemulihan Waktu (trr) | 50 ns |
| Paket / Case | DO-219AB |
| Kemasan | Tape & Reel (TR) |
| Suhu Operasional - Junction | -55°C ~ 150°C |
| mount Jenis | Surface Mount |
| Saat ini - Reverse Kebocoran @ Vr | 5 µA @ 200 V |
| Saat ini - rata Rectified (Io) | 1A |
| Kapasitansi @ Vr, F | 20pF @ 4V, 1MHz |
| Nomor produk dasar | HS1D |







DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
DIODE GEN PURP 200V 1A SUB SMA
50NS, 1A, 200V, HIGH EFFICIENT R
DIODE GEN PURP 200V 1A SUB SMA