Produsen Bagian Nomor. : | SI4910DY-T1-GE3 | Status RoHs : | Memimpin bebas / RoHS Compliant |
---|---|---|---|
Pabrikan / Merek : | Electro-Films (EFI) / Vishay | Kondisi stok : | 4576 pcs Stock |
Deskripsi : | MOSFET 2N-CH 40V 7.6A 8-SOIC | Kirim Dari : | Hongkong |
Lembar data : | SI4910DY-T1-GE3.pdf | Cara pengiriman : | DHL/Fedex/TNT/UPS/EMS |
Bagian No. | SI4910DY-T1-GE3 |
---|---|
Pabrikan | Electro-Films (EFI) / Vishay |
Deskripsi | MOSFET 2N-CH 40V 7.6A 8-SOIC |
Memimpin Status Bebas / Status RoHS | Memimpin bebas / RoHS Compliant |
Jumlah yang tersedia | 4576 pcs |
Lembar data | SI4910DY-T1-GE3.pdf |
Vgs (th) (Max) @ Id | 2V @ 250µA |
Paket Perangkat pemasok | 8-SO |
Seri | TrenchFET® |
Rds Pada (Max) @ Id, Vgs | 27 mOhm @ 6A, 10V |
Listrik - Max | 3.1W |
Pengemasan | Original-Reel® |
Paket / Case | 8-SOIC (0.154", 3.90mm Width) |
Nama lain | SI4910DY-T1-GE3DKR |
Suhu Operasional | -55°C ~ 150°C (TJ) |
mount Jenis | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS | 855pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
FET Jenis | 2 N-Channel (Dual) |
Fitur FET | Standard |
Tiriskan untuk Sumber Tegangan (Vdss) | 40V |
Detil Deskripsi | Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C | 7.6A |
Nomor Bagian Dasar | SI4910 |
MOSFET 2P-CH 40V 8A 8SO
MOSFET 2N-CH 40V 5A 8-SOIC
MOSFET 2N-CH 30V 8.4A 8-SOIC
MOSFET 2N-CH 30V 8.4A 8-SOIC
MOSFET 2N-CH 40V 7.6A 8-SOIC
MOSFET 2P-CH 20V 7.1A 8-SOIC
MOSFET 2N-CH 40V 6.6A 8-SOIC
MOSFET 2N-CH 40V 6.6A 8-SOIC
MOSFET 2P-CH 20V 7.1A 8-SOIC
MOSFET 2N-CH 30V 5.5A 8-SOIC